Nano Electron Device - Fujishiro's Laboratory

Prof. Fujishiro has been engaged in research and development of a variety of hetero-structure devices on different semiconductor systems (GaAs, InP, GaN, and more recently InSb) for high-speed and millimeter-wave ICs. His work addresses issues of epitaxial growth, fabrication technology, physics, modeling and circuit design.

His current research interests include the coupled physical device-circuit simulation employing the Monte Carlo method, the MBE growth of narrow-gap materials (InAs, InSb) with application to nano electron devices, and the fabrication and characterization of nano-structures on III-V and Si surfaces.

> Fujishiro's Laboratory Website

Keywords

Compound Semiconductor,Hetero-Structure, Nano-Structure, High Speed Device, High Electron Mobility Transistor (HEMT), Nano-Device Simulation, Monte Carlo Method, Molecular Beam Epitaxy (MBE), Scanning Tunneling Microscopy (STM), Nano-Patterning

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